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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION. FEATURE
Complementary to MPS8550.
B
MPS8050
EPITAXIAL PLANAR NPN TRANSISTOR
C
A
N
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 40 25 6 1.5 625 150 -55 150 UNIT V V V A
L
K D
E G
H
F
F
1
2
3
mW
M
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
)
SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO hFE(1) TEST CONDITION VCB=35V, IE=0 VEB=6V, IC=0 IC=100 A, IE=0 IC=2mA, IB=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=10V, IC=50mA VCB=10V, f=1MHz, IE=0 300 MIN. 40 25 45 85 40 100 TYP. 135 160 110 0.28 0.98 0.66 190 9 MAX. 100 100 300 0.5 1.2 1.0 V V V MHz pF UNIT nA nA V V
DC Current Gain
hFE(2) (Note) hFE(3)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(2) Classification
VCE(sat) VBE(sat) VBE fT Cob
B:85 160 , C : 120 200 , D : 160
1999. 10. 25
Revision No : 1
1/2
MPS8050
I C - V CE
0.5 COLLECTOR CURRENT I C (mA) 0.4 0.3 0.2 0.1
I B=0.5mA
h FE - I C
1k DC CURRENT GAIN hFE
I B=3.0mA I B=2.5mA I B=2.0mA I B=1.5mA I B=1.0mA VCE =1V
500 300
100 50 30
0
0
0.4
0.8
1.2
1.6
2.0
10 0.1
0.3
1
3
10
30
100
300
1K
COLLECTOR-EMITTER VOLTAGE V CE (V)
COLLECTOR CURRENT I C (mA)
I C - V BE
100 COLLECTOR CURRENT I C (mA) 50 30 10 5 3 1 0.5 0.3 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V)
VCE =1V
V BE(sat), VCE(sat) - I C
SATURATION VOLTAGE V BE(sat), V CE(sat) (mV) 5k 3k 1k 500 300 100 50 30 10 0.1 0.3 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA)
VCE (sat) VBE (sat) IC =10I B
fT - IC
COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 300 100 50 30
VCE =10V
C ob - V CB
f=1MHz I E =0
100 50 30
10 5 3
10 1 3 5 10 30 50 100 300 COLLECTOR CURRENT I C (mA)
1 1 3 5 10 3 0 50 COLLECTOR-BASE VOLTAGE VCB (V)
1999. 10. 25
Revision No : 1
2/2

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